STP100NF03L-03

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 100 A
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0032 Ohms


Application

 HIGH CURRENT, HIGH SWITCHING SPEED
  MOTOR CONTROL, AUDIO AMPLIFIERS
  DC-DC & DC-AC CONVERTERS
  SOLENOID AND RELAY DRIVERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 16	V
ID(1)	Drain Current (continuous) at Tc = 25	100	A
ID(1)	Drain Current (continuous) at Tc = 100	100	A
IDM(`)	Drain Current (pulsed)	400	A
PTOT	Total Dissipation at Tc = 25	300	W
	Derating Factor	2	W/
EAS (2)	Single Pulse Avalanche Energy	1.9	J
Tstg	Storage Temperature	-55 to 150
Tj	Operating Junction Temperature	-55 to 175

(•)Pulse width limited by safe operating area (1) Current Limited by Package
(2) Starting Tj = 25 , ID = 50A, V_DD = 50V


Description

This Power MOSFET STP100NF03L-03 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.