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MFG:ST  Package Cooled:TO-220  D/C:08+  

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Part Number: STP100NF04

 

MFG: ST

Package Cooled: TO-220

D/C: 08+

Description: This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" ...


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STP100NF04 General Description


This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP100NF04 Maximum Ratings

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
40
V
VDGR Drain-gate Voltage (RGS = 20 k)
40
V
VGS Gate- source Voltage
± 20
V
ID Drain Current (continuos) at TC = 25
120
A
ID(#) Drain Current (continuos) at TC = 100
120
A
IDM(`) Drain Current (pulsed)
480
A
PTOT Total Dissipation at TC = 25
300
W
Derating Factor
2
W/
dv/dt (1) Peak Diode Recovery voltage slope
6
V/ns
EAS(2) Single Pulse Avalanche Energy
1.2
J
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 175

(`) Pulse width limited by safe operating area
(1) ISD 120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package

STP100NF04 Features

TYPICAL RDS(on) = 0.0043
STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED

STP100NF04 Typical Application

 · HIGH CURRENT, HIGH SWITCHING SPEED
 · MOTOR CONTROL, AUDIO AMPLIFIERS
 · DC-DC & DC-AC CONVERTERS
 · SOLENOID AND RELAY DRIVERS

STP100NF04 datasheet

STP100NF04
PDF/DataSheet Download

  • Datasheet: STP100NF04
  • File Size: 598905 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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