STP200NF03

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0032 Ohms


Features:

`  TYPICAL R<sub>DS(on)</sub> = 0.0032
`  STANDARD THRESHOLD DRIVE
`  100% AVALANCHE TESTED


Application

·  HIGH CURRENT, HIGH SWITCHING SPEED
·  DC-DC & DC-AC CONVERTERS
·  SOLENOID AND RELAY DRIVERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 k)	30	V
VGS	Gate- source Voltage	±20	V
ID(**)	Drain Current (continuos) at TC = 25	120	A
ID	Drain Current (continuos) at TC = 100	120	A
IDM()	Drain Current (pulsed)	480	A
PTOT	Total Dissipation at TC = 25	300	W
	Derating Factor	2.0	W/
dv/dt (1)	Peak Diode Recovery voltage slope	1.5	V/ns
EAS(2)	Single Pulse Avalanche Energy	1.45	J
Tstg	Storage Temperature	55 to 175
Tj	Max. Operating Junction Temperature

() Pulse width limited by safe operating area
(**) Current Limited by Package
(1) I_SD120A, di/dt400A/s, V_DD V_(BR)DSS, T_j T_JMAX
(2) Starting T_j = 25 , I_D = 60 A, V_DD = 25 V


Description

This Power MOSFET STP200NF03 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STP200NF03
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	3.6 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds	4950pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP200NF03 STP200NF03 497 6738 5 ND 49767385ND 497-6738-5