Features: TYPICAL RDS(on) = 0.028 100% AVALANCHE TESTED LOW GATE CHARGE LOW THRESHOLD DRIVEApplicationDC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit STP16NB25 STP16NB25FP VDS Drain-source Voltage (VGS = 0) 30 ...
STP30NE03LFP: Features: TYPICAL RDS(on) = 0.028 100% AVALANCHE TESTED LOW GATE CHARGE LOW THRESHOLD DRIVEApplicationDC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Sym...
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Symbol | Parameter | Value | Unit | |
STP16NB25 | STP16NB25FP | |||
VDS | Drain-source Voltage (VGS = 0) | 30 | V | |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 30 | V | |
VGS | Gate- source Voltage | ± 20 | V | |
ID | Drain Current (continuos) at TC = 25 |
30 |
17 | A |
ID | Drain Current (continuos) at TC = 100 | 21 | 12 | A |
IDM() | Drain Current (pulsed) | 120 | 68 | A |
PTOT | Total Dissipation at TC = 25 | 70 | 25 | W |
Derating Factor | 0.47 | 0.17 | W/ | |
VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
Tstg | Storage Temperature | 65 to 175 | ||
Tj | Max. Operating Junction Temperature | 175 |
This STP30NE03LFP Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.