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STP30NE06LFP

Features: TYPICAL RDS(on) = 0.035100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit STP30NE06L STP30NE06LFP VDS Drain-source Voltage (...

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SeekIC No. : 004508389 Detail

STP30NE06LFP: Features: TYPICAL RDS(on) = 0.035100% AVALANCHE TESTEDLOW GATE CHARGEAPPLICATIONORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecificati...

STP30NE06LFP Data Sheet

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Part Number:
STP30NE06LFP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.035  
 100% AVALANCHE TESTED
 LOW GATE CHARGE
 APPLICATIONORIENTED CHARACTERIZATION


Application

 DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
STP30NE06L STP30NE06LFP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
 30
17 A
ID Drain Current (continuos) at TC = 100 21 12 A
IDM() Drain Current (pulsed) 120 68 A
PTOT Total Dissipation at TC = 25 80 30 W
  Derating Factor 0.53 0.2 W/
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175
(•) Pulse width limited by safe operating area


Description

This STP30NE06LFP Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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