Position: Home  > All Categories> Integrated Circuits (ICs) > STP36NE06FP

STP36NE06FP

Features: TYPICAL RDS(on) = 0.032 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATION ORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERSSpecifications Sy...

product image

STP36NE06FP Picture
See larger image
SeekIC No. : 004508403 Detail

STP36NE06FP: Features: TYPICAL RDS(on) = 0.032 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATION ORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID ...

STP36NE06FP Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STP36NE06FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 TYPICAL RDS(on) = 0.032
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATION ORIENTED CHARACTERIZATION


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter Value Unit
STP36NE06 STP36NE06FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
 36
 20 A
ID Drain Current (continuos) at TC = 100 24 14 A
IDM() Drain Current (pulsed) 144 144 A
PTOT Total Dissipation at TC = 25 100 35 W
  Derating Factor 0.66 0.27 W/
dv/dt (1) Peak Diode Recovery voltage slope 7 7 V/ns
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 75
(•) Pulse width limited by safe operating area   (1) ISD  36 A,di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX


Description

This STP36NE06 Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
LED Products
LM24P20
KCG057QV1DB-G770
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Memory Cards, Modules
WT32
VTL5C7
View more