STP36NF06FP

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 18 A
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.04 Ohms


Application

 HIGH CURRENT, HIGH SWITCHING SPEED


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain- gate Voltage (RGS = 20 k)	60		V
VGS	Gate-Source Voltage	± 20		V
ID	Drain Current (continuous) at Tc = 25	30	18 (*)	A
ID	Drain Current (continuous) at Tc = 100	21	12	A
IDM(`)	Drain Current (pulsed)	120	72	A
PTOT(1)	Total Dissipation at Tc = 25	70	25	W
	Derating Factor	0.47	0.17	W/
dv/dt (1)	Gate source ESD(HBM-C=100pF, R=1.5KW)	20		V/ns
EAS (2)	Peak Diode Recovery voltage slope	200		mJ
Tstg	Storage Temperature	-55 to 175
Tj	Operating Junction Temperature

(•)Pulse width limited by safe operating area (1)ISD36A, di/dt400A/µs, V_DD(BR)DSS, Tj0TJMAX
(3) Starting Tj = 25 , ID = 18A, V_DD = 45V (*) Current Limited by Package


Description

This Power MOSFET STP36NF06FP is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STP36NF06FP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	40 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	690pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-220FP
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP36NF06FP STP36NF06FP