STP36NF06L

MOSFET N-Ch 60 Volt 30 Amp

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SeekIC No. : 00147823 Detail

STP36NF06L: MOSFET N-Ch 60 Volt 30 Amp

floor Price/Ceiling Price

US $ .52~.83 / Piece | Get Latest Price
Part Number:
STP36NF06L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.83
  • $.7
  • $.58
  • $.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 18 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.032 Ohms
Gate-Source Breakdown Voltage : +/- 18 V


Features:

` TYPICAL RDS(on) = 0.032
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION
` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

· POWER TOOLS
· AUTOMOTIVE ENVIRONMENT



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 k)
60
V
VGS
Gate- source Voltage
±18
V
ID
Drain Current (continuos) at TC = 25
30
A
ID
Drain Current (continuos) at TC = 100
21
A
IDM (`)
Drain Current (pulsed)
120
A
Ptot
Total Dissipation at TC = 25
70
mW
Derating Factor
0.47
W/
dv/dt(1) Peak Diode Recovery voltage slope
10
V/ns
EAS (2)
Single Pulse Avalanche Energy
235
mJ
Tstg
Storage Temperature
-55 to 175
Tj
Max. Operating Junction Temperature

(`) Pulse width limited by safe operating area.
(1) ISD 30A, di/dt200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25, ID = 15A, VDD = 30V


Description

This Power MOSFET STP36NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP36NF06L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs40 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 660pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP36NF06L
STP36NF06L
497 7522 5 ND
49775225ND
497-7522-5



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