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STP3NC50

Features: TYPE VDSS RDS(on) ID STP3NC50 500V < 4 2.8A`TYPICAL RDS (on) = 3 `EXTREMELY HIGH dv/dt CAPABILITY `100% AVALANCHE TESTED `NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING ·SWITH MODE POWER SUPPLIES (SMPS)·DC-...

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SeekIC No. : 004508420 Detail

STP3NC50: Features: TYPE VDSS RDS(on) ID STP3NC50 500V < 4 2.8A`TYPICAL RDS (on) = 3 `EXTREMELY HIGH dv/dt CAPABILITY `100% AVALANCHE TESTED `NEW HIGH VOLTAGE BENCHMARK` GATE ...

STP3NC50 Data Sheet

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Part Number:
STP3NC50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP3NC50
500V
< 4
2.8A

`TYPICAL RDS (on) = 3
`EXTREMELY HIGH dv/dt CAPABILITY
`100% AVALANCHE TESTED
`NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING  EQUIPMENT AND UNINTERRUPTIBLE  POWER SUPPLIES AND MOTOR DRIVER


Specifications

Symbol
Parameter
Value
Units
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain-gate Voltage (RGS = 20 k )
500
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25
2.8
A
ID
 Drain Current (continuos) at TC = 100
1.8
A
IDM (1)
 Drain Current (pulsed)
11.2
A
PTOT
 Total Dissipation at TC = 25
75
W
 Derating Factor
0.6
/W/
dv/dt
Peak Diode Recovery voltage slope
3
V/ns
Tstg
 Storage Temperature
-65 to 15
Tj
 Max. Operating Junction Temperature
150

(1)ISD2.8A, di/dt100A/s, V DDV (BR)DSS , T j T JMAX

(`)Pulse width limited by safe operating area


Description

The STP3NC50 PowerMESHTMII is the evolution of the first  generation of MESH OVERLAYTM . The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness.




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