MOSFET N-Ch 650 Volt 33 Amp
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Features: `TYPICAL RDS(on)=0.016 `AVALANCHERUGGEDTECHNOLOGY`100%AVALANCHETESTED`HIGHCURRENTCAPABIL...
Features: · TYPICAL R DS(on) = 0.014 W· EXCEPTIONAL dv/dt CAPABILITY· LOW GATE CHARGE A 100 oC·APP...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 33 A | ||
Resistance Drain-Source RDS (on) : | 0.07 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |