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STP45NE06

MOSFET N-CH 60V 45A

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SeekIC No. : 00166073 Detail

STP45NE06: MOSFET N-CH 60V 45A

STP45NE06 Data Sheet

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Part Number:
STP45NE06
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

* TYPICAL RDS(on) = 0.022
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE 100
* APPLICATION ORIENTED
   CHARACTERIZATION


Application

* HIGH CURRENT, HIGH SPEED SWITCHING
* SOLENOID AND RELAY DRIVERS
* MOTOR CONTROL, AUDIO AMPLIFIERS
* DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter Value Unit
STP60NE06 STP60NE06FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 k) 60 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 45 25 A
ID Drain Current (continuous) at Tc = 100 31 17.5 A
IDM(•) Drain Current (pulsed) 180 180 A
Ptot Total Dissipation at Tc = 25 100 35 W
  Derating Factor 0.67 0.23 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STP45NE06 is the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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