MFG:ST Package Cooled:03+ D/C:220
MFG: ST
Package Cooled: 03+
D/C: 220
Description: This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature SizeTM" s...
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter | Value | Unit | |
| STP60NE06 | STP60NE06FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 60 | V | |
| VGS | Gate-source Voltage | ± 20 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 45 | 25 | A |
| ID | Drain Current (continuous) at Tc = 100 | 31 | 17.5 | A |
| IDM(•) | Drain Current (pulsed) | 180 | 180 | A |
| Ptot | Total Dissipation at Tc = 25 | 100 | 35 | W |
| Derating Factor | 0.67 | 0.23 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP45NE06
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