STP45NF06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 28 mOhms
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 38 A


Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
 SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain-gate Voltage (RGS = 20 k)	60	V
VGS	Gate- source Voltage	±20	V
ID	Drain Current (continuos) at TC = 25°C	38	A
ID	Drain Current (continuos) at TC = 100°C	26	A
IDM ()	Drain Current (pulsed)	152	A
PTOT	Total Dissipation at TC = 25°C	80	W
	Derating Factor	0.53	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	7	V/ns
Tstg	Storage Temperature	65 to 175	°C
Tj	Max. Operating Junction Temperature	175	°C

Description

This STP45NF06 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.