STP4NA90

The STP4NA90 is N-channel enhancement mode fast power MOS transistor. The applications of it are: high current, high speed switching, switch mode power supplies, DC-AC converters for welding quipment and uninterruptible power supplies and motor drive.

Features of the STP4NA90 are:(1)typical RDS(ON)=3.1;(2)±30V gate to sourece voltage rating;(3)100% avalanche tested;(4)repetitive avalanche data at 100;(5)low intrinsic capacitances;(6)gate charge minimized;(7)reduced threshlod voltage spread.

The absolute maximum ratings of the STP4NA90 can be summarized as:(1)drain-source voltage:900V;(2)drain-gate voltage:900V;(3)gate-source voltage:±30V;(4)drain current at Tc=25:3.5A;(5)drain current at Tc=100:2.2A;(6)drain current(plused):14A;(7)total dissipation at Tc=25:110W;(8)derating factor:0.88W/;(9)storage temperature:-65 to 150;(10)max. operating junction temperature:150.

If you want to know more information such as the electrical characteristics about the STP4NA90, please download the datasheet in www.seekic.com or www.chinaicmart.com .