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STP4NB30

Features: ` TYPICAL RDS(on) = 1.8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED`NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENTSpecificat...

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STP4NB30: Features: ` TYPICAL RDS(on) = 1.8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED`NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITH MOD...

STP4NB30 Data Sheet

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Part Number:
STP4NB30
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` TYPICAL RDS(on) = 1.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
`NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol
Parameter
Value
Unit
STP4NB30
STP4NB30FP
VDS
Drain-source Voltage (VGS = 0)
300
V
VDGR
Drain-gate Voltage (RGS = 20 k )
300
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
4
4 (*)
A
ID
Drain Current (continuos) at TC = 100°C
2.5
2.5 (*)
A
I DM (1)
Drain Current (pulsed)
16
16 (*)
A
PTOT
Total Dissipation at TC = 25°C
70
30
W
Derating Factor
0.56
0.24
W/°C
dv/d
Peak Diode Recovery voltage slope
4
V/ns
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(1)ISD 4 A, di/dt  100A/s, VDD   V (BR)DSS, Tj  TJMAX
(*) Limited only by Maximum Temperature Allowed


Description

Using the latest high voltage STP4NB30 MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics




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