STP50NE10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.027 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	100	V
VDGR	Drain- gate Voltage (RGS = 20 k)	100	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25 oC	50	A
ID	Drain Current (continuous) at Tc = 100 oC	35	A
IDM(•)	Drain Current (pulsed)	200	A
Ptot	Total Dissipation at Tc = 25 oC	150	W
	Derating Factor	1	W/oC
dv/dt (1)	Peak Diode Recovery voltage slope	6	V/ns
Tstg	Storage Temperature	-65 to 175	oC
Tj	Max. Operating Junction Temperature	175	oC

Description

This STP50NE10 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size^TM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.



Parameters:

Technical/Catalog Information	STP50NE10
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	27 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	166nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STP50NE10 STP50NE10 497 2644 5 ND 49726445ND 497-2644-5