STP50NE10L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.02 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	100	V
VDGR	Drain- gate Voltage (RGS = 20 k)	100	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25 oC	50	A
ID	Drain Current (continuous) at Tc = 100 oC	35	A
IDM(•)	Drain Current (pulsed)	200	A
Ptot	Total Dissipation at Tc = 25 oC	150	W
	Derating Factor	1	W/oC
dv/dt (1)	Peak Diode Recovery voltage slope	6	V/ns
Tstg	Storage Temperature	-65 to 175	oC
Tj	Max. Operating Junction Temperature	175	oC

Description

This STP50NE10L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size^TM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.