STP55NE06L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.022 Ohms
Continuous Drain Current : 55 A


Features:

* TYPICALRDS(on) = 0.018
* EXCEPTIONAL dV/dt CAPABILTY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE 100
* HIGH dV/dt CAPABILITY
* APPLICATIONORIENTED
   CHARACTERIZATION


Application

* DC MOTOR CONTROL
* DC-DC & DC-AC CONVERTERS
* SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value		Unit
		STP60NE06L	STP60NE06LFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain- gate Voltage (RGS = 20 k)	60		V
VGS	Gate-source Voltage	± 15		V
ID	Drain Current (continuous) at Tc = 25	55	28	A
ID	Drain Current (continuous) at Tc = 100	39	20	A
IDM(•)	Drain Current (pulsed)	220	220	A
Ptot	Total Dissipation at Tc = 25	130	35	W
	Derating Factor	0.86	0.23	W/
VISO	Insulation Withstand Voltage (DC)	-	2000	V
dv/dt	Peak Diode Recovery voltage slope	7		V/ns
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

Description

This STP55NE06L Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.