MOSFET N-Ch, 1200V-2.8ohms 4.4A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1200 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 4.7 A | ||
| Resistance Drain-Source RDS (on) : | 3.5 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Technical/Catalog Information | STP5N120 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25° C | 4.4A |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 2.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP5N120 STP5N120 497 8811 5 ND 49788115ND 497-8811-5 |