STP5NA50FI Selling Leads, Price trend, STP5NA50FI DataSheet download, circuit diagram from SeekIC.com

Features: TYPE VDSS RDS(on) ID STP5NA50FI 500 V < 1.6 3A`TYPICAL RDS(on) = 1.2` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DATA AT 100oC` LOW INTRINSIC CAPACITANCES` GATE GHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREADApplic...

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SeekIC No. : 004508469 Detail

STP5NA50FI: Features: TYPE VDSS RDS(on) ID STP5NA50FI 500 V < 1.6 3A`TYPICAL RDS(on) = 1.2` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DATA...

STP5NA50FI Data Sheet

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Part Number:: STP5NA50FI
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

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Upload time: 2025/12/24

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MOSFET TO-220AB N-CH 60V

Product Details

Description

Features:

TYPE	V_DSS	R_DS(on)	ID
STP5NA50FI	500 V	< 1.6	3 A

`TYPICAL RDS(on) = 1.2
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100oC
` LOW INTRINSIC CAPACITANCES
` GATE GHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD

Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-sourceVoltage(V_GS =0)	500	V
V_DGR	Drain-gateVoltage(R_GS =20k)	500	V
V_GS	Gate-sourceVoltage	±30	V
I_D	DrainCurrent(continuous)atTc =25	3	A
I_D	Drain Current(continuous)atTc =100	2	A
I_DM(`)	Drain Current(pulsed)	20	A
P_tot	Total DissipationatT =25	40	W
	Derating Factor	0.32	W/
V_ISO	InsulationWithstandVoltage(DC)	2000	V
T_stg	Storage Temperature	-65 to 150
T_j	Max.Operating Junction Temperature	150

(•) Pulse width limited by safe operating area

Description

This STP5NA50FI series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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STP5NA50FI

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