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STP5NB100FP

Features: `TYPICAL RDS(on) = 2.4 ` EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES`GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIE...

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STP5NB100FP: Features: `TYPICAL RDS(on) = 2.4 ` EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES`GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH ...

STP5NB100FP Data Sheet

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Part Number:
STP5NB100FP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`TYPICAL RDS(on) = 2.4
` EXTREMELY HIGH dv/dt CAPABILITY
`100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
`GATE CHARGE MINIMIZED


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
 Parameter
Value
 Unit
STP5NB100
STP5NB100FP
VDS
 Drain-source Voltage (VGS = 0)
1000
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
1000
V
VGS
 Gate-source Voltage
± 30
V
ID
 Drain Current (continuous) at Tc = 25
5
5(*)
A
ID
 Drain Current (continuous) at Tc = 100
3.1
3.1(*)
A
IDM(•)
 Drain Current (pulsed)
15.2
15.2
A
Ptot
 Total Dissipat ion at Tc = 25
135
40
W
 Derat ing Factor
1.08
0.32
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
4.5
V/ns
VISO
 Insulat ion Withstand Voltage (DC)
-
2000
V
Ts tg
 Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD 5 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs STP5NB100FP with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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