Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 400 V
Continuous Drain Current
: 4.7 A
Resistance Drain-Source RDS (on)
: 1.75 Ohms
Features: ` TYPICAL RDS(on) = 1.47
` 100% AVALANCHE TESTED
` VERYLOW INTRINSIC CAPACITANCES
` GATECHARGE MINIMIZED
` EXTREMELY HIGH dv/dt CAPABILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVESpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
STP5NB40 |
STP5NB40FP |
|
VDS |
Drain-source Voltage (VGS = 0) |
400 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
400 |
V |
|
VGS |
Gate-source Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4.7 |
3.1 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3 |
2 |
A |
|
IDM(•) |
Drain Current (pulsed) |
19 |
19 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
80 |
35 |
W |
|
|
Derating Factor |
0.64 |
0.28 |
W/ |
| dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
4.5 |
V/ns |
|
VISO |
Insulat ion Withstand Voltage (DC) |
- |
2000 |
V |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
|
(•) Pulse width limited by safe operating area
(1) ISD 5A, di/dt 200 A/ms, VDD V(BR)DSS, Tj TJMAXDescriptionUsing the latest high voltage STP5NB40 MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Parameters: | Technical/Catalog Information | STP5NB40 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25° C | 4.7A |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 2.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 405pF @ 25V |
| Power - Max | 80W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP5NB40
STP5NB40
497 2675 5 ND
49726755ND
497-2675-5
|
STP5NB40 Data Sheet
