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STP5NB40FP

Features: ` TYPICAL RDS(on) = 1.47 ` 100% AVALANCHE TESTED` VERYLOW INTRINSIC CAPACITANCES` GATECHARGE MINIMIZED` EXTREMELY HIGH dv/dt CAPABILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPL...

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STP5NB40FP: Features: ` TYPICAL RDS(on) = 1.47 ` 100% AVALANCHE TESTED` VERYLOW INTRINSIC CAPACITANCES` GATECHARGE MINIMIZED` EXTREMELY HIGH dv/dt CAPABILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWIT...

STP5NB40FP Data Sheet

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Part Number:
STP5NB40FP
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

` TYPICAL RDS(on) = 1.47
` 100% AVALANCHE TESTED
` VERYLOW INTRINSIC CAPACITANCES
` GATECHARGE MINIMIZED
` EXTREMELY HIGH dv/dt CAPABILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
 Parameter
Value
Unit
STP5NB40
STP5NB40FP
VDS
 Drain-source Voltage (VGS = 0)
400
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
400
V
VGS
 Gate-source Voltage
± 30
V
ID
 Drain Current (continuous) at Tc = 25
4.7
3.1
A
ID
 Drain Current (continuous) at Tc = 100
3
2
A
IDM(•)
 Drain Current (pulsed)
19
19
A
Ptot
 Total Dissipation at Tc = 25
80
35
W
 Derating Factor
0.64
0.28
W/
   dv/dt(1) Peak Diode Recovery voltage slope
4.5
4.5
V/ns
VISO
 Insulat ion Withstand Voltage (DC)
-
2000
V
Tstg
 Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD  5A, di/dt  200 A/ms, VDD V(BR)DSS, Tj  TJMAX


Description

Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of Power MOSFETs STP5NB40FP with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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