MOSFET RO 511-STP4NK60Z
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5 A | ||
| Resistance Drain-Source RDS (on) : | 1.8 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol | Parameter | Value | Unit | |
| STP5NB60 | STP5NB60FP | |||
| VDS | Drain-source Voltage (VGS =0) | 600 | V | |
| VDGR | Drain-gate Voltage (RGS =20kΩ) | 600 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 5 | 3 | A |
| ID | Drain Current (continuous) at TC =100°C | 3.1 | 1.9 | A |
| IDM (· ) | Drain Current (pulsed) | 20 | 20 | A |
| PTOT | Total Dissipation at TC = 25°C | 100 | 35 | W |
| Derating Factor | 0.8 | 0.28 | W/°C | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | 4.5 | V/ns |
| VISO | Insulation Withstand Voltage (DC) | 2000 | V | |
Tstg |
Storage Temperature |
-65to150 | °C | |
| Tj | Operating Junction Temperature | 150 | °C | |
| Technical/Catalog Information | STP5NB60 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 884pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STP5NB60 STP5NB60 497 2769 5 ND 49727695ND 497-2769-5 |