STP5NB80FP

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1.8 Ohms
Drain-Source Breakdown Voltage : 800 V


Features:

TYPE	VDSS	RDS(on)	ID
STP5NB80FP	800 V	< 2.2	5 A

` TYPICAL R<sub>DS(on)</sub> = 1.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Units
VDSS	Drain-Source Voltage	800	V
VDGR	Drain- gate Voltage (RGS = 20 k)	800	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	5(*)	A
ID	Drain Current (continuous) at Tc = 100	3.2	A
IDM(•)	Drain Current (pulsed)	20	A
Ptot	Total Dissipation at Tc = 25	40	W
	Derat ing Factor	0.32	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4	V/ns
VISO	Insulat ion Withstand Voltage (DC)	2000	V
Tstg	Storage Temperature	-65 to +150
Tj	Max. Operating Junction Temperature	150

(*) Limited only by maximum temperature allowed

( 1) I_SD 5A, di/dt 200 A/s, V_DD V_(BR)DSS, Tj  T_JMAX


Description

Using the latest high voltage STP5NB80FP MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.