Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 900 V
Continuous Drain Current
: 5 A
Resistance Drain-Source RDS (on)
: 2.3 Ohms
Features: *TYPICAL RDS(on) = 2.3 W
* EXTREMELY HIGH dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* VERY LOW INTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZEDApplication* HIGH CURRENT, HIGH SPEED SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY(UPS)
* DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENTSpecifications
| Symbol |
Parameter |
Value |
Unit |
| STP5NB90 |
STP5NB90FP |
| VDS |
Drain-source Voltage (VGS = 0) |
900 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 kW) |
900 |
V |
| VGS |
Gate-source Voltage |
± 30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 oC |
5 |
5(*) |
A |
| ID |
Drain Current (continuous) at Tc = 100 oC |
3.1 |
3.1(*) |
A |
| IDM(•) |
Drain Current (pulsed) |
20 |
20 |
A |
| Ptot |
Total Dissipation at Tc = 25 oC |
125 |
40 |
W |
| |
Derating Factor |
1.0 |
0.32 |
W/oC |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
4.5 |
V/ns |
| VISO |
Insulat ion Withstand Voltage (DC) ' |
- |
2000 |
V |
| Ts tg |
Storage Temperature |
-65 to 150 |
oC |
| Tj Max |
. Operating Junction Temperature |
150 |
oC |
(•) Pulse width limited by safe operating area
( 1) ISD 35 A di/dt 3 200 A/ms, VDD 3 V(BR)DSS, Tj 3 TJMAX
(*) Limited only by maximum temperature allowed
DescriptionUsing the latest high voltage STP5NB90 MESH OVERLAY]process, STMicroelectronics has designed anadvanced family of power MOSFETs with outstanding performances. The new patentpending strip layout coupled with the Company'sproprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP5NB90 Data Sheet
