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STP5NB90FP

Features: ` TYPICAL RDS(on) = 2.3` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED`VERY LOW INTRINSIC CAPACITANCES`GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING·UNINTERRUPTIBLE POWER SUPPLY(UPS)·DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONM...

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STP5NB90FP: Features: ` TYPICAL RDS(on) = 2.3` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED`VERY LOW INTRINSIC CAPACITANCES`GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING·UNINTERR...

STP5NB90FP Data Sheet

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Part Number:
STP5NB90FP
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

` TYPICAL RDS(on) = 2.3
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
`VERY LOW INTRINSIC CAPACITANCES
`GATE CHARGE MINIMIZED


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·UNINTERRUPTIBLE POWER SUPPLY(UPS)
·DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol
 Parameter
Value
Unit
STP5NB90
STP5NB90FP
VDS
 Drain-source Voltage (VGS = 0)
900
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
900
V
VGS
 Gate-source Voltage
± 30
V
ID
 Drain Current (continuous) at Tc = 25
5
5(*)
A
ID
 Drain Current (continuous) at Tc = 100
3.1
3.1(*)
A
IDM(•)
 Drain Current (pulsed)
20
20
A
Ptot
 Total Dissipation at Tc = 25
125
40
W
 Derating Factor
1.0
0.32
W/oC
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
4.5
V/ns
VISO
 Insulat ion Withstand Voltage (DC)
-
2000
V
Tstg
 Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD 5 A, di/dt 200 A/ms, VDD V (BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

Using the latest high voltage STP5NB90FP MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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