Features: `TYPICALRDS (on)=1.47 `EXTREMELYHIGHdv/dtCAPABILITY`100%AVALANCHETESTED`GATECHARGEMINIMIZED`VERYLOWINTRINSICCAPACITANCES`VERYGOODMANUFACTURING REPEATIBILITYApplication·HIGHCURRENT,HIGHSPEEDSWITCHING·IDEALFOROFF-LINEPOWERSUPPLIES, ADAPTORSANDPFC·LIGHTINGSpecifications Symbol Paramet...
STP5NK40ZFP: Features: `TYPICALRDS (on)=1.47 `EXTREMELYHIGHdv/dtCAPABILITY`100%AVALANCHETESTED`GATECHARGEMINIMIZED`VERYLOWINTRINSICCAPACITANCES`VERYGOODMANUFACTURING REPEATIBILITYApplication·HIGHCURRENT,HIGHSPEE...
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| Symbol | Parameter | Value | Unit | ||
STP5NK40Z |
STP5NK40ZFP |
STD5NK40Z STD5NK40Z-1 | |||
| VDS | Drain-source Voltage (VGS = 0) |
400 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 ) |
400 | V | ||
| VGS | Gate- source Voltage | ±30 | V | ||
| ID | Drain Current (continuous) at TC = 25 |
3 | 3(*) | 3 | A |
| ID | Drain Current (continuous) at TC = 100 | 1.9 | 1.9(*) | 1.9 | A |
| IDM(`) | Drain Current (pulsed) | 12 | 12(*) | 12 | A |
| PTOT | Total Dissipation at TC = 25 |
45 | 20 | 45 | W |
| Derating Factor | 0.36 | 0.16 | 0.36 | W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) | 2800 | V | ||
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
|||
The STP5NK40ZFP SuperMESHTM series is obtained through an extreme optimization of STMs well established strip based PowerMESH?layout. In addition to pushing on resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seriesc omplements ST full range of high voltage MOSFETs inluding revolutionary MDmeshTM products.