STP5NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1.6 Ohms


Features:

 `  TYPICAL R<sub>DS(on)</sub> = 1.2
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  GATE CHARGE MINIMIZED
 `  VERY LOW INTRINSIC CAPACITANCES
 `  VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol	Parameter	Value		Unit
		IPAK	TO-220FP
VDS	Collector-Source Voltage (VGS = 0 V)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate-Source Voltage	±30		V
ID	Drain Current (continuous) at TC = 25	5	5	A
ID	Drain Current (continuous) at TC = 100	3.16	3.16	A
IDM(`)	Drain Current (pulsed)	20	20	A
PTOT	Total Dissipation at TC = 25	90	25	W
	Derating Factor	0.72	0.2	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	3000		V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(`) Pulse width limited by safe operating area.
(1) I_SD 5A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed


Description

The STP5NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STP5NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	1.6 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	690pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STP5NK60Z STP5NK60Z 497 3196 5 ND 49731965ND 497-3196-5