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STP60NE03L-12

ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSDC-DC & DC-AC CONVERTERSAUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain- gate Voltage (RGS = 20 k) 30 V VGS Gat...

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SeekIC No. : 004508490 Detail

STP60NE03L-12: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSDC-DC & DC-AC CONVERTERSAUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Drain-sour...

STP60NE03L-12 Data Sheet

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Part Number:
STP60NE03L-12
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
30
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
30
V
VGS
 Gate-source Voltage
± 20
V
ID
 Drain Current (continuous) at Tc = 25 oC
60
A
ID
 Drain Current (continuous) at Tc = 100 oC
42
A
IDM(•)
 Drain Current (pulsed)
240
A
Ptot
 Total Dissipation at Tc = 25 oC
100
W
 Derating Factor
0.67
W/oC
dv/dt
Peak Diode Recovery voltage slope
5.5
V/ns
Tstg
 Storage Temperature
-65 to 175
oC
Tj
 Max. Operating Junction Temperature
175
oC



Description

This Power MOSFET STP60NE03L-12 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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