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STP60NE06-16

MOSFET N-Ch 60 Volt 60 Amp

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SeekIC No. : 00162313 Detail

STP60NE06-16: MOSFET N-Ch 60 Volt 60 Amp

STP60NE06-16 Data Sheet

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Part Number:
STP60NE06-16
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

* TYPICAL RDS(on) = 0.013
* EXCEPTIONAL dV/dt CAPABILTY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE 100
* HIGH dV/dt CAPABILITY
* APPLICATION ORIENTED
   CHARACTERIZATION


Application

* DC MOTOR CONTROL
* DC-DC & DC-AC CONVERTERS
* SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
STP60NE06-16 STP60NE06-16FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 k) 60 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 60 35 A
ID Drain Current (continuous) at Tc = 100 42 24 A
IDM(•) Drain Current (pulsed) 240 240 A
Ptot Total Dissipation at Tc = 25 150 40 W
  Derating Factor 1 0.3 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STP60NE06-16 is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.




Parameters:

Technical/Catalog InformationSTP60NE06-16
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs16 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 6200pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP60NE06 16
STP60NE0616
497 2770 5 ND
49727705ND
497-2770-5



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