MFG:ST Package Cooled:TO-220F D/C:05+
MFG: ST
Package Cooled: TO-220F
D/C: 05+
Description: This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereb...
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
| Symbol | Parameter | Value | Unit | |
| STP60NE06-16 | STP60NE06-16FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 60 | V | |
| VGS | Gate-source Voltage | ± 20 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 60 | 35 | A |
| ID | Drain Current (continuous) at Tc = 100 | 42 | 24 | A |
| IDM(•) | Drain Current (pulsed) | 240 | 240 | A |
| Ptot | Total Dissipation at Tc = 25 | 150 | 40 | W |
| Derating Factor | 1 | 0.3 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 6 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP60NE06-16FP
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This Power Mosfet STP60NE06-16is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, ru...
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