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STP60NE06L-16

MOSFET N-Ch 60 Volt 60 Amp

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SeekIC No. : 00163181 Detail

STP60NE06L-16: MOSFET N-Ch 60 Volt 60 Amp

STP60NE06L-16 Data Sheet

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Part Number:
STP60NE06L-16
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Processing time
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.012 Ohms


Features:

* TYPICAL RDS(on) = 0.014 W
* AVALANCHERUGGED TECHNOLOGY
* LOW GATE CHARGE
* HIGH CURRENT CAPABILITY
* 175  OPERATINGTEMPERATURE
* LOW THRESHOLD DRIVE


Application

* HIGH CURRENT, HIGH SPEED SWITCHING
* SOLENOID AND RELAY DRIVERS
* DC-DC & DC-AC CONVERTERS
* AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter Value Unit
STP60NE06L-16

STP60NE06L-16FP

VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kW) 60 V
VGS Gate-source Voltage ± 15 V
ID Drain Current (continuous) at Tc = 25 60 35 A
ID Drain Current (continuous) at Tc = 100 42 24 A
IDM(•) Drain Current (pulsed) 240 140 A
Ptot Total Dissipation at Tc = 25 150 45 W
  Derating Factor 1 0.3 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STP60NE06L-16 is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.




Parameters:

Technical/Catalog InformationSTP60NE06L-16
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs14 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 4150pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP60NE06L 16
STP60NE06L16



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