MFG:TO220ABNONISOL Package Cooled:7850 D/C:ST
MFG: TO220ABNONISOL
Package Cooled: 7850
D/C: ST
Description: This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size]" strip-b...
This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
| Symbol | Parameter | Value | Unit | |
| STP60NE06L-16 |
STP60NE06L-16FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 kW) | 60 | V | |
| VGS | Gate-source Voltage | ± 15 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 60 | 35 | A |
| ID | Drain Current (continuous) at Tc = 100 | 42 | 24 | A |
| IDM(•) | Drain Current (pulsed) | 240 | 140 | A |
| Ptot | Total Dissipation at Tc = 25 | 150 | 45 | W |
| Derating Factor | 1 | 0.3 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 6 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP60NE06L-16
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This Power Mosfet STP60NE06-16FPis the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, ...
This Power Mosfet STP60NE06-16is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, ru...
This Power MOSFET STP60NE03L-12 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less...
This Power Mosfet STP60NE03L-10 is the latest development of SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical a...
This n-channel enhancement mode Power MOSFET STP60N55F3is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibilit...
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