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Part Number: STP60NE06L-16FP

 

 

 

 

Description: This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size]" strip-b...


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STP60NE06L-16FP General Description


This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

STP60NE06L-16FP Maximum Ratings

Symbol Parameter Value Unit
STP60NE06L-16

STP60NE06L-16FP

VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kW) 60 V
VGS Gate-source Voltage ± 15 V
ID Drain Current (continuous) at Tc = 25 60 35 A
ID Drain Current (continuous) at Tc = 100 42 24 A
IDM(•) Drain Current (pulsed) 240 140 A
Ptot Total Dissipation at Tc = 25 150 45 W
  Derating Factor 1 0.3 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175

STP60NE06L-16FP Features

* TYPICAL RDS(on) = 0.014 W
* AVALANCHERUGGED TECHNOLOGY
* LOW GATE CHARGE
* HIGH CURRENT CAPABILITY
* 175  OPERATINGTEMPERATURE
* LOW THRESHOLD DRIVE

STP60NE06L-16FP Typical Application

* HIGH CURRENT, HIGH SPEED SWITCHING
* SOLENOID AND RELAY DRIVERS
* DC-DC & DC-AC CONVERTERS
* AUTOMOTIVE ENVIRONMENT

STP60NE06L-16FP datasheet

STP60NE06L-16FP
PDF/DataSheet Download

  • Datasheet: STP60NE06L-16FP
  • File Size: 109196 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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