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STP60NE06L-16FP

Features: *TYPICAL RDS(on) = 0.014 W* AVALANCHERUGGED TECHNOLOGY* LOW GATE CHARGE* HIGH CURRENT CAPABILITY* 175 OPERATINGTEMPERATURE* LOW THRESHOLD DRIVEApplication*HIGH CURRENT, HIGH SPEED SWITCHING* SOLENOID AND RELAY DRIVERS* DC-DC & DC-AC CONVERTERS* AUTOMOTIVE ENVIRONMENTSpecifications ...

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STP60NE06L-16FP: Features: *TYPICAL RDS(on) = 0.014 W* AVALANCHERUGGED TECHNOLOGY* LOW GATE CHARGE* HIGH CURRENT CAPABILITY* 175 OPERATINGTEMPERATURE* LOW THRESHOLD DRIVEApplication*HIGH CURRENT, HIGH SPEED SWITCHIN...

STP60NE06L-16FP Data Sheet

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Part Number:
STP60NE06L-16FP
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* TYPICAL RDS(on) = 0.014 W
* AVALANCHERUGGED TECHNOLOGY
* LOW GATE CHARGE
* HIGH CURRENT CAPABILITY
* 175  OPERATINGTEMPERATURE
* LOW THRESHOLD DRIVE


Application

* HIGH CURRENT, HIGH SPEED SWITCHING
* SOLENOID AND RELAY DRIVERS
* DC-DC & DC-AC CONVERTERS
* AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter Value Unit
STP60NE06L-16

STP60NE06L-16FP

VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kW) 60 V
VGS Gate-source Voltage ± 15 V
ID Drain Current (continuous) at Tc = 25 60 35 A
ID Drain Current (continuous) at Tc = 100 42 24 A
IDM(•) Drain Current (pulsed) 240 140 A
Ptot Total Dissipation at Tc = 25 150 45 W
  Derating Factor 1 0.3 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STP60NE06L-16FP is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.




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