MFG:ST Package Cooled:TO-220 D/C:04+
MFG: ST
Package Cooled: TO-220
D/C: 04+
Description: This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-...
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit | |
| STP60NE10 | STP60NE10FP | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V | |
|
VGS |
Gate-source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 | 60 |
30 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 | 42 |
21 |
A |
|
IDM(`) |
Drain Current (pulsed) | 240 |
120 |
A |
|
Ptot |
Total Dissipation at Tc = 25 | 160 |
50 |
W |
| Derating Factor | 1.06 |
0.37 |
W/ | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2000 |
V |
|
dv/dt |
Peak Diode Recovery voltage slope |
7 |
V/ns | |
|
Tstg |
Storage Temperature |
-65 to 175
|
°C | |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C | |
STP60NE10
PDF/DataSheet Download
This Power Mosfet STP60NE06L-16FPis the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less c...
This Power Mosfet STP60NE06L-16is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less cri...
This Power Mosfet STP60NE06-16FPis the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, ...
This Power Mosfet STP60NE06-16is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, ru...
This Power MOSFET STP60NE03L-12 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less...
This Power Mosfet STP60NE03L-10 is the latest development of SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical a...
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