STP60NE10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

 TYPICAL R_DS(on) = 0.016
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED CHARACTERIZATION


Application

SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol	Parameter	Value		Unit
		STP60NE10	STP60NE10FP
VDS	Drain-source Voltage (VGS = 0)	100		V
VDGR	Drain- gate Voltage (RGS = 20 k)	100		V
VGS	Gate-source Voltage	±20		V
ID	Drain Current (continuous) at Tc = 25	60	30	A
ID	Drain Current (continuous) at Tc = 100	42	21	A
IDM(`)	Drain Current (pulsed)	240	120	A
Ptot	Total Dissipation at Tc = 25	160	50	W
	Derating Factor	1.06	0.37	W/
VISO	Insulation Withstand Voltage (DC)	-	2000	V
dv/dt	Peak Diode Recovery voltage slope	7		V/ns
Tstg	Storage Temperature	-65 to 175		°C
Tj	Max. Operating Junction Temperature	175		°C

(•) Pulse width limited by safe operating area ( 1) I_SD 60 A, di/dt 300 A/ms, V_DD V(BR)D_SS, Tj T_JMAX


Description

This Power MOSFET STP60NE10 is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.