Features: TYPICAL RDS(on) = 0.016 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONApplicationSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC CONVERTERSAUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Specifications Symb...
STP60NE10FP: Features: TYPICAL RDS(on) = 0.016 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONApplicationSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC CON...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: `TYPICAL RDS(on) = 0.012 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE A...
|
Symbol |
Parameter |
Value |
Unit | |
| STP60NE10 | STP60NE10FP | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V | |
|
VGS |
Gate-source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 | 60 |
30 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 | 42 |
21 |
A |
|
IDM(`) |
Drain Current (pulsed) | 240 |
120 |
A |
|
Ptot |
Total Dissipation at Tc = 25 | 160 |
50 |
W |
| Derating Factor | 1.06 |
0.37 |
W/ | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2000 |
V |
|
dv/dt |
Peak Diode Recovery voltage slope |
7 |
V/ns | |
|
Tstg |
Storage Temperature |
-65 to 175
|
°C | |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C | |
This Power MOSFET STP60NE10FP is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.