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Part Number: STP60NE10FP

 

 

 

 

Description: This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-...


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STP60NE10FP General Description


This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP60NE10FP Maximum Ratings

Symbol
Parameter
Value
Unit
STP60NE10 STP60NE10FP
VDS
 Drain-source Voltage (VGS = 0)
100
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
100
V
VGS
 Gate-source Voltage
±20
V
ID
 Drain Current (continuous) at Tc = 25 60
30
A
ID
 Drain Current (continuous) at Tc = 100 42
21
A
IDM(`)
 Drain Current (pulsed) 240
120
A
Ptot
 Total Dissipation at Tc = 25 160
50
W
 Derating Factor 1.06
0.37
W/
VISO
 Insulation Withstand Voltage (DC)
-
2000
V
dv/dt
 Peak Diode Recovery voltage slope
7
V/ns
Tstg
 Storage Temperature
-65 to 175
°C
Tj
 Max. Operating Junction Temperature
175
°C
(•) Pulse width limited by safe operating area ( 1) ISD 60 A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX

STP60NE10FP Features

 TYPICAL RDS(on) = 0.016
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED CHARACTERIZATION

STP60NE10FP Typical Application

SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

STP60NE10FP datasheet

STP60NE10FP
PDF/DataSheet Download

  • Datasheet: STP60NE10FP
  • File Size: 111391 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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