STP60NE10FP

Features: TYPICAL RDS(on) = 0.016 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONApplicationSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC CONVERTERSAUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Specifications Symb...

product image

STP60NE10FP Picture
SeekIC No. : 004508493 Detail

STP60NE10FP: Features: TYPICAL RDS(on) = 0.016 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONApplicationSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC CON...

floor Price/Ceiling Price

Part Number:
STP60NE10FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 TYPICAL RDS(on) = 0.016
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED CHARACTERIZATION



Application

SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol
Parameter
Value
Unit
STP60NE10 STP60NE10FP
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-source Voltage
±20
V
ID
Drain Current (continuous) at Tc = 25 60
30
A
ID
Drain Current (continuous) at Tc = 100 42
21
A
IDM(`)
Drain Current (pulsed) 240
120
A
Ptot
Total Dissipation at Tc = 25 160
50
W
Derating Factor 1.06
0.37
W/
VISO
Insulation Withstand Voltage (DC)
-
2000
V
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
Tstg
Storage Temperature
-65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
(•) Pulse width limited by safe operating area ( 1) ISD 60 A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX


Description

This Power MOSFET STP60NE10FP is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Fans, Thermal Management
Programmers, Development Systems
LED Products
Circuit Protection
Optical Inspection Equipment
View more