MFG:ST Package Cooled:TO-220 D/C:06+
MFG: ST
Package Cooled: TO-220
D/C: 06+
Description: This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" ...
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS |
Gate- source Voltage |
±20 |
V |
| ID |
Drain Current (continuos) at TC = 25°C |
60 |
A |
| ID |
Drain Current (continuos) at TC = 100°C |
42 |
A |
| IDM (l) |
Drain Current (pulsed) |
240 |
A |
| PTOT |
Total Dissipation at TC = 25°C |
100 |
W |
|
Derating Factor |
0.67 |
W/°C | |
| EAS(1) |
Single Pulse Avalanche Energy |
650 |
mJ |
| Tstg |
Storage Temperature |
65 to 175 |
°C |
| Tj |
Max. Operating Junction Temperature |
175 |
°C |
STP60NF03L
PDF/DataSheet Download
This Power MOSFET STP60NE10FPis the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less cri...
This Power MOSFET STP60NE10is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less criti...
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This Power Mosfet STP60NE06-16FPis the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, ...
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