STP60NF06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 16 mOhms
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A


Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
AUTOMOTIVE


Specifications

Symbol	Parameter	Value		Unit
		STP60NF06	STP60NF06FP	V
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 k)	60		V
VGS	Gate- source Voltage	± 20		V
ID	Drain Current (continuos) at TC = 25°C	60	37	A
ID	Drain Current (continuos) at TC = 100°C	42	26	A
IDM ()	Drain Current (pulsed)	240	148	A
PTOT	Total Dissipation at TC = 25°C	110	42	W
	Derating Factor	0.73	0.28	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope			V/ns
VISO	Insulation Winthstand Voltage (DC)			V
	Storage Temperature			°C
	Max. Operating Junction Temperature

Description

This Power Mosfet series STP60NF06 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

Parameters:

Technical/Catalog Information	STP60NF06
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	16 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1660pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	73nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP60NF06 STP60NF06 497 2779 5 ND 49727795ND 497-2779-5