STP60NF10

MOSFET N-Ch 100 Volt 80 Amp

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SeekIC No. : 00147220 Detail

STP60NF10: MOSFET N-Ch 100 Volt 80 Amp

floor Price/Ceiling Price

US $ 1.08~1.71 / Piece | Get Latest Price
Part Number:
STP60NF10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.71
  • $1.42
  • $1.22
  • $1.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 23 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 23 mOhms


Features:

TYPICAL RDS(on) = 0.019 Ω
EXTREMELY HIGHL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")




Application

HIGH EFFICIENCY DC/DC CONVERTERS, INDUSTRIAL, AND LIGHTING EQUIPMENT.
MOTOR CONTROL




Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20k)
100
V
VGS
Gate-source Voltage
±20
V
ID(*)
Drain Current (continuous) at Tc = 25 oC
80
A
ID
Drain Current (continuous) at Tc = 100 oC
66
A
IDM(•)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at Tc = 25 oC
300
W
Derating Factor
2
W/oC
dv/dt (1)
Peak Diode Recovery voltage slope
16
V/ns
EAS (2)
Single Pulse Avalanche Energy
485
mJ
Tstg
Storage Temperature
-55 to 175
oC



Description

This MOSFET series STP60NF10 realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.




Parameters:

Technical/Catalog InformationSTP60NF10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs23 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 4270pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs104nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP60NF10
STP60NF10
497 4384 5 ND
49743845ND
497-4384-5



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