Position: Home  > All Categories> Integrated Circuits (ICs) > STP60NS04ZB

STP60NS04ZB

ApplicationABS,SOLENOID DRIVERSMOTOR CONTROLDC-DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) CLAMPED V VD Drain- gate Voltage CLAMPED V VGS Gate-source Voltage CLAMPED V ID Drain Current (continuo...

product image

STP60NS04ZB Picture
See larger image
SeekIC No. : 004508495 Detail

STP60NS04ZB: ApplicationABS,SOLENOID DRIVERSMOTOR CONTROLDC-DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) CLAMPED V VD Drain- gate Vol...

STP60NS04ZB Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STP60NS04ZB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

 ABS,SOLENOID DRIVERS
 MOTOR CONTROL
 DC-DC CONVERTERS


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
CLAMPED
V
VD
 Drain- gate Voltage
CLAMPED
V
VGS
 Gate-source Voltage
CLAMPED
V
ID
 Drain Current (continuous) at Tc = 25 oC
60
A
ID
 Drain Current (continuous) at Tc = 100 oC
42
A
IDG
 Drain Gate Current (continuous)
± 50
mA
IGS
 Gate Source Current (continuous)
± 50
mA
IDM(•)
 Drain Current (pulsed)
240
A
Ptot
 Total Dissipation at Tc = 25 oC
150
W
 Derating Factor
1
W/oC
VESD(G-S)
 Gate-Source ESD (HBM - C= 100pF, R=1.5 k)
6
kV
VESD(G-D)
 Gate-Drain ESD (HBM - C= 100pF, R=1.5 k)
4
kV
VESD(D-S)
 Drain-Source ESD (HBM - C= 100pF, R=1.5 k)
4
kV
Tstg
 Storage Temperature
65 to 175
oC
Tj
 Max. Operating Junction Temperature



Description

This fully clamped MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make STP60NS04ZB particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Switches
US32DMRJ
HBGQ22P-11ET
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Memory Cards, Modules
WT32
VTL5C7
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Optical Inspection Equipment
AA924
A21K4B
Undefined Category
VI-B63-IU
X27 589
View more