MOSFET N-Ch Clamped 62 Amp
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Features: `TYPICAL RDS(on) = 0.012 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE A...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 33 V | ||
| Gate-Source Breakdown Voltage : | 18 V | Continuous Drain Current : | 62 A | ||
| Resistance Drain-Source RDS (on) : | 15 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
CLAMPED |
V |
|
VDG |
Drain- gate Voltage |
CLAMPED |
V |
|
VGS |
Gate-source Voltage |
CLAMPED |
V |
|
ID |
Drain Current (continuous) at Tc = 25 oC |
62 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 oC |
37.5 |
A |
|
IDG |
Drain Gate Current (continuous) |
± 50 |
mA |
|
IGS |
Gate Source Current (continuous) |
± 50 |
mA |
|
IDM(•) |
Drain Current (pulsed) |
248 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
110 |
W |
| Derating Factor |
0.74 |
W/oC | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
8 |
V/ns |
|
EAS (2) |
Single Pulse Avalanche Energy |
500 |
mJ |
|
VESD |
ESD (HBM - C = 100pF, R=1.5 kΩ) |
8 |
kV |
|
Tstg |
Storage Temperature |
-55 to 175 |
oC
|
|
Tj |
Operating Junction Temperature |
This fully clamped STP62NS04Z Mosfet is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout.
The inherent benefits of the new technology coupled with the extra clamping capabilities make STP62NS04Z particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
| Technical/Catalog Information | STP62NS04Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 33V |
| Current - Continuous Drain (Id) @ 25° C | 62A |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1330pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP62NS04Z STP62NS04Z 497 5896 5 ND 49758965ND 497-5896-5 |