STP62NS04Z

MOSFET N-Ch Clamped 62 Amp

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SeekIC No. : 00147568 Detail

STP62NS04Z: MOSFET N-Ch Clamped 62 Amp

floor Price/Ceiling Price

US $ .46~.71 / Piece | Get Latest Price
Part Number:
STP62NS04Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.71
  • $.63
  • $.52
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 33 V
Gate-Source Breakdown Voltage : 18 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 15 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 15 mOhms
Gate-Source Breakdown Voltage : 18 V
Drain-Source Breakdown Voltage : 33 V


Application

ABS, SOLENOID DRIVERS
POWER TOOLS



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
CLAMPED
V
VDG
Drain- gate Voltage
CLAMPED
V
VGS
Gate-source Voltage
CLAMPED
V
ID
Drain Current (continuous) at Tc = 25 oC
62
A
ID
Drain Current (continuous) at Tc = 100 oC
37.5
A
IDG
Drain Gate Current (continuous)
± 50
mA
IGS
Gate Source Current (continuous)
± 50
mA
IDM(•)
Drain Current (pulsed)
248
A
Ptot
Total Dissipation at Tc = 25 oC
110
W
Derating Factor
0.74
W/oC
dv/dt (1)
Peak Diode Recovery voltage slope
8
V/ns
EAS (2)
Single Pulse Avalanche Energy
500
mJ
VESD
ESD (HBM - C = 100pF, R=1.5 kΩ)
8
kV
Tstg
Storage Temperature
-55 to 175
oC
Tj
Operating Junction Temperature



Description

This fully clamped STP62NS04Z Mosfet is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout.

The inherent benefits of the new technology coupled with the extra clamping capabilities make STP62NS04Z particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.




Parameters:

Technical/Catalog InformationSTP62NS04Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)33V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs15 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1330pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP62NS04Z
STP62NS04Z
497 5896 5 ND
49758965ND
497-5896-5



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