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STP6NB50FP

Features: TYPE VDSS RDS(on) ID STP6NB50FP 500 V < 1.5 3.4A` TYPICAL RDS(on) = 1.35 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERYLOW INTRINSIC CAPACITANCES` GATECHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPL...

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SeekIC No. : 004508507 Detail

STP6NB50FP: Features: TYPE VDSS RDS(on) ID STP6NB50FP 500 V < 1.5 3.4A` TYPICAL RDS(on) = 1.35 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERYLOW INTRINSIC CAPACI...

STP6NB50FP Data Sheet

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Part Number:
STP6NB50FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP6NB50FP
500 V
< 1.5
3.4 A

` TYPICAL RDS(on) = 1.35
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERYLOW INTRINSIC CAPACITANCES
` GATECHARGE MINIMIZED



Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Units
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
500
V
VGS
 Gate-source Voltage
±30
V
ID
 Drain Current (continuous) at Tc = 25
3.4
A
ID
 Drain Current (continuous) at Tc = 100
2.1
A
IDM(•)
 Drain Current (pulsed)
23.2
A
Ptot
 Total Dissipation at Tc = 25
35
W
 Derating Factor
0.28
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
V/ns
VISO
 Insulat ion Withstand Voltage (DC)
2000
Tstg
 Storage Temperature
-65 to +150
Tj
 Max. Operating Junction Temperature
300

(•) Pulse width limited by safe operating area
(1) ISD 6A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAY] process, SGS-Thomson has designed an advancd family of power MOSFETs STP6NB50FP with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the loest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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