MFG:ST Package Cooled:TO-220F
MFG: ST
Package Cooled: TO-220F
Description: The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per ...
| Symbol | Parameter | Value | Unit | |
| STP(B)6NC80Z(-1) | STP6NC80ZFP | |||
| VDS | Drain-source Voltage (VGS =0) | 800 | V | |
| VDGR | Drain-gate Voltage (RGS =20kΩ) | 800 | V | |
| VGS | Gate- source Voltage | ±25 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 5.4 | 5.4(*) | A |
| ID | Drain Current (continuous) at TC =100°C | 3.4 | 3.4 (*) | A |
| IDM (· ) | Drain Current (pulsed) | 21 | 21 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 125 | 40 | W |
| Derating Factor | 1 | 0.32 | W/°C | |
| IGS | Gate-source Current | ±50 | mA | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=15KΩ) | 3 | KV | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 3 | V/ns | |
| VISO | Insulation Withstand Voltage (DC) | 2000 | V | |
Tstg |
Storage Temperature |
-65to150 | °C | |
| Tj | Operating Junction Temperature | 150 | °C | |
STP6NC80ZFP
PDF/DataSheet Download
The third generation of MESH OVERLAY™ Power MOSFETs STP6NC80Zfor very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with hi...
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