MFG:ST Package Cooled:1798 D/C:IC
MFG: ST
Package Cooled: 1798
D/C: IC
Description: The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per ...
| Symbol | Parameter | Value | Unit | |
| STP(B)6NC90Z(-1) | STP6NC90ZFP | |||
| VDS | Drain-source Voltage (VGS =0) | 900 | V | |
| VDGR | Drain-gate Voltage (RGS =20kΩ) | 900 | V | |
| VGS | Gate- source Voltage | ±25 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 5.4 | 5.4(*) | A |
| ID | Drain Current (continuous) at TC =100°C | 3.43 | 3.43 (*) | A |
| IDM (· ) | Drain Current (pulsed) | 21 | 21 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 135 | 40 | W |
| Derating Factor | 1.08 | 0.32 | W/°C | |
| IGS | Gate-source Current | ±50 | mA | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=15KΩ) | 3 | KV | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 3 | V/ns | |
| VISO | Insulation Withstand Voltage (DC) | 2000 | V | |
Tstg |
Storage Temperature |
-65to150 | °C | |
| Tj | Operating Junction Temperature | 150 | °C | |
STP6NC90Z
PDF/DataSheet Download
The third generation of MESH OVERLAY™ Power MOSFETs STP6NC80ZFP for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with...
The third generation of MESH OVERLAY™ Power MOSFETs STP6NC80Zfor very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with hi...
The PowerMESH(TM)II STP6NC60 - STP6NC60FPis the evolution of the first generation of MESH OVERLAY(TM). The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge for what concerns swithing s...
Using the latesthigh voltageMESH OVERLAY(TM) process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB90FPwith outstanding performances. The new patent pending strip layout coupled with the Company'sproprietary edge termination stru...
Using the latesthigh voltageMESH OVERLAY(TM) process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB90 with outstanding performances. The new patent pending strip layout coupled with the Company'sproprietary edge termination struc...
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB80FPwith outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination stru...
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