MOSFET N-Ch 500 Volt 5.6Amp
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Features: `TYPICAL RDS(on) = 0.012 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE A...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5.6 A | ||
| Resistance Drain-Source RDS (on) : | 1200 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol | Parameter | Value | Unit | |
| STP6NK50Z STD6NK50Z |
STF6NK50Z | |||
| VDS | Drain-sourceVoltage(VGS=0) | 500 | V | |
| VDGR | Drain-gateVoltage(RGS=20kΩ) | 500 | V | |
| VGS | Gate-sourceVoltage | ±30 | V | |
| ID | DrainCurrent(continuous)at TC=25°C | 5.6 | 5.6(*) | A |
| ID | DrainCurrent(continuous)at TC=100°C | 3.5 | 3.5(*) | A |
| IDM | DrainCurrent(pulsed)22.422.4(*)A | 22.4 | 22.4(*) | A |
| PTOT | TotalDissipationat TC=25°C | |||
| DeratingFactor | 0.72 | 0.2 | W | |
| VESD(G-S) | GatesourceESD(HBM-C=100pF,R=1.5KΩ) | 3000 | W/°C | |
| dv/dt(1) | PeakDiodeRecoveryvoltageslope | 4.5 | V/ns | |
| VISO | InsulationWithstandVoltage(DC) | - | 2500 | V |
| Tj Tstg |
OperatingJunctionTemperature StorageTemperature |
-55to150 | °C | |
The SuperMESH™ series STP6NK50Z is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™products.
| Technical/Catalog Information | STP6NK50Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 5.6A |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 690pF @ 25V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 24.6nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP6NK50Z STP6NK50Z 497 4385 5 ND 49743855ND 497-4385-5 |