STP6NK50Z

MOSFET N-Ch 500 Volt 5.6Amp

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STP6NK50Z Picture
SeekIC No. : 00151386 Detail

STP6NK50Z: MOSFET N-Ch 500 Volt 5.6Amp

floor Price/Ceiling Price

US $ .35~.57 / Piece | Get Latest Price
Part Number:
STP6NK50Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.57
  • $.47
  • $.41
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.6 A
Resistance Drain-Source RDS (on) : 1200 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5.6 A
Resistance Drain-Source RDS (on) : 1200 mOhms


Features:

TYPICALRDS(on)=0.93Ω
EXTREMELYHIGHdv/dtCAPABILITY
100%AVALANCHETESTED
GATECHARGEMINIMIZED
VERYLOWINTRINSICCAPACITANCES
VERYGOODMANUFACTURING REPEATIBILITY



Application

HIGH CURRENT,HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
LIGHTING



Specifications

Symbol Parameter Value Unit
    STP6NK50Z
STD6NK50Z
STF6NK50Z  
VDS Drain-sourceVoltage(VGS=0) 500 V
VDGR Drain-gateVoltage(RGS=20kΩ) 500 V
VGS Gate-sourceVoltage ±30 V
ID DrainCurrent(continuous)at TC=25°C 5.6 5.6(*) A
ID DrainCurrent(continuous)at TC=100°C 3.5 3.5(*) A
IDM DrainCurrent(pulsed)22.422.4(*)A 22.4 22.4(*) A
PTOT TotalDissipationat TC=25°C      
  DeratingFactor 0.72 0.2 W
VESD(G-S) GatesourceESD(HBM-C=100pF,R=1.5KΩ) 3000  W/°C
dv/dt(1) PeakDiodeRecoveryvoltageslope 4.5 V/ns
VISO InsulationWithstandVoltage(DC) - 2500 V
Tj
Tstg
OperatingJunctionTemperature
StorageTemperature
-55to150  °C



Description

The SuperMESH™ series STP6NK50Z is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™products.




Parameters:

Technical/Catalog InformationSTP6NK50Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C5.6A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds 690pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs24.6nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP6NK50Z
STP6NK50Z
497 4385 5 ND
49743855ND
497-4385-5



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