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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: STP6NK60Z

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH&#...


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STP6NK60Z General Description


The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STP6NK60Z Maximum Ratings

Symbol Parameter Value Unit
STP6NK60Z
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP  
VDS Drain-source Voltage (VGS =0) 600 V
VDGR Drain-gate Voltage (RGS =20kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 6 6(*) A
ID Drain Current (continuous) at TC =100°C 3.8 3.8 (*) A
IDM (` ) Drain Current (pulsed) 2.4 2.4 (*) A
PTOT Total Dissipation at TC = 25°C 110 32 W
  Derating Factor 0.88 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 3500 KV
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2000 V

Tstg,Tj

Storage TemperatureOperating Junction Temperature
-65to150
-65to150
°C
°C

STP6NK60Z Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING

STP6NK60Z datasheet

STP6NK60Z
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  • Datasheet: STP6NK60Z
  • File Size: 434897 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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