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Part Number: STP6NK90Z

 

 

 

 

Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH&#...


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STP6NK90Z General Description


The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STP6NK90Z Maximum Ratings

Symbol Parameter Value Unit
    STP6NK90Z/STB6NK90Z STP6NK90ZFP  
VDS Drain-source Voltage (VGS =0) 900 V
VDGR Drain-gate Voltage (RGS =20kΩ) 900 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 5.8 5.8(*) A
ID Drain Current (continuous) at TC =100°C 3.65 3.65 (*) A
IDM (` ) Drain Current (pulsed) 23.2 23.2 (*) A
PTOT Total Dissipation at TC = 25°C 140 40 W
  Derating Factor 1.12 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 4000 KV
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2500 V

Tstg,Tj
Storage TemperatureOperating Junction Temperature		 -55 to 150 °C
°C

STP6NK90Z Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING

STP6NK90Z datasheet

STP6NK90Z
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  • Datasheet: STP6NK90Z
  • File Size: 441545 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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  • STP6NK50Z

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