STP6NK90Z

MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH

product image

STP6NK90Z Picture
SeekIC No. : 00147389 Detail

STP6NK90Z: MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH

floor Price/Ceiling Price

US $ .93~1.47 / Piece | Get Latest Price
Part Number:
STP6NK90Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.47
  • $1.22
  • $1.05
  • $.93
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/10

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 2000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 2000 mOhms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING



Specifications

Symbol Parameter Value Unit
    STP6NK90Z/STB6NK90Z STP6NK90ZFP  
VDS Drain-source Voltage (VGS =0) 900 V
VDGR Drain-gate Voltage (RGS =20kΩ) 900 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 5.8 5.8(*) A
ID Drain Current (continuous) at TC =100°C 3.65 3.65 (*) A
IDM (` ) Drain Current (pulsed) 23.2 23.2 (*) A
PTOT Total Dissipation at TC = 25°C 140 40 W
  Derating Factor 1.12 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 4000 KV
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2500 V

Tstg,Tj

Storage TemperatureOperating Junction Temperature
-55 to 150 °C
°C



Description

The STP6NK90Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary STP6NK90Z MDmesh™ products.


Parameters:

Technical/Catalog InformationSTP6NK90Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C5.8A
Rds On (Max) @ Id, Vgs2 Ohm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs60.5nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP6NK90Z
STP6NK90Z
497 3199 5 ND
49731995ND
497-3199-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Memory Cards, Modules
Tapes, Adhesives
803
Line Protection, Backups
Prototyping Products
DE1
Audio Products
View more