MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH
STP6NK90Z: MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5.8 A | ||
Resistance Drain-Source RDS (on) : | 2000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Parameter | Value | Unit | |
STP6NK90Z/STB6NK90Z | STP6NK90ZFP | |||
VDS | Drain-source Voltage (VGS =0) | 900 | V | |
VDGR | Drain-gate Voltage (RGS =20kΩ) | 900 | V | |
VGS | Gate- source Voltage | ±30 | V | |
ID | Drain Current (continuous) at TC = 25°C | 5.8 | 5.8(*) | A |
ID | Drain Current (continuous) at TC =100°C | 3.65 | 3.65 (*) | A |
IDM (` ) | Drain Current (pulsed) | 23.2 | 23.2 (*) | A |
PTOT | Total Dissipation at TC = 25°C | 140 | 40 | W |
Derating Factor | 1.12 | 0.24 | W/°C | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=15KΩ) | 4000 | KV | |
dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | |
VISO | Insulation Withstand Voltage (DC) | 2500 | V | |
Tstg,Tj |
Storage TemperatureOperating Junction Temperature |
-55 to 150 | °C °C |
Technical/Catalog Information | STP6NK90Z |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 5.8A |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.9A, 10V |
Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
Power - Max | 140W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 60.5nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP6NK90Z STP6NK90Z 497 3199 5 ND 49731995ND 497-3199-5 |