STP6NK90ZFP

MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A

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STP6NK90ZFP Picture
SeekIC No. : 00155832 Detail

STP6NK90ZFP: MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A

floor Price/Ceiling Price

US $ .76~.95 / Piece | Get Latest Price
Part Number:
STP6NK90ZFP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~640
  • 640~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.95
  • $.82
  • $.79
  • $.76
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 2 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING



Specifications

Symbol Parameter Value Unit
    STP6NK90Z/STB6NK90Z STP6NK90ZFP  
VDS Drain-source Voltage (VGS =0) 900 V
VDGR Drain-gate Voltage (RGS =20kΩ) 900 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 5.8 5.8(*) A
ID Drain Current (continuous) at TC =100°C 3.65 3.65 (*) A
IDM (` ) Drain Current (pulsed) 23.2 23.2 (*) A
PTOT Total Dissipation at TC = 25°C 140 40 W
  Derating Factor 1.12 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 4000 KV
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2500 V

Tstg,Tj

Storage TemperatureOperating Junction Temperature
-55 to 150 °C
°C



Description

The STP6NK90ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary STP6NK90ZFP MDmesh™ products.


Parameters:

Technical/Catalog InformationSTP6NK90ZFP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C5.8A
Rds On (Max) @ Id, Vgs2 Ohm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs60.5nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP6NK90ZFP
STP6NK90ZFP



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