MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A
STP6NK90ZFP: MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5.8 A | ||
| Resistance Drain-Source RDS (on) : | 2 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220FP | Packaging : | Tube |
| Symbol | Parameter | Value | Unit | |
| STP6NK90Z/STB6NK90Z | STP6NK90ZFP | |||
| VDS | Drain-source Voltage (VGS =0) | 900 | V | |
| VDGR | Drain-gate Voltage (RGS =20kΩ) | 900 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 5.8 | 5.8(*) | A |
| ID | Drain Current (continuous) at TC =100°C | 3.65 | 3.65 (*) | A |
| IDM (` ) | Drain Current (pulsed) | 23.2 | 23.2 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 140 | 40 | W |
| Derating Factor | 1.12 | 0.24 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=15KΩ) | 4000 | KV | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | |
| VISO | Insulation Withstand Voltage (DC) | 2500 | V | |
Tstg,Tj |
Storage TemperatureOperating Junction Temperature |
-55 to 150 | °C °C | |
| Technical/Catalog Information | STP6NK90ZFP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
| Power - Max | 30W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60.5nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP6NK90ZFP STP6NK90ZFP |