MFG:ST Package Cooled:TO-220 D/C:06+
MFG: ST
Package Cooled: TO-220
D/C: 06+
Description: This device is realized with the second generation of MDmesh™ technology. This revolutionary Pow...
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
|
Symbol |
Parameter |
Value |
Unit | |
|
TO-220 DPAK/IPAK |
TO-220FP | |||
|
VDS |
Drain-source voltage (VGS=0) |
600 |
V | |
|
VGS |
Gate-source voltage |
± 25 |
V | |
|
ID |
Drain current (continuous) at TC = 25 |
4.6 |
4.6(1) |
A |
|
ID |
Drain current (continuous) at TC = 100 |
2.9 |
2.9(1) |
A |
|
IDM(2) |
Drain current (pulsed) |
18.4 |
18.4(1) |
A |
|
PTOT |
Total dissipation at TC = 25 |
45 |
20 |
A |
|
dv/dt (3) |
Peak diode recovery voltage slope |
15 |
V/ns | |
|
VISO |
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25) |
-- |
2500 |
V |
|
Tj,Tstg |
Operating junction temperature Storage temperature |
-55 to 150 |
||
STP04CM596B1R
PDF/DataSheet Download
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