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Part Number: STP6NS25

 

MFG: ST

 

 

Description: Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced...


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STP6NS25 General Description


Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.

STP6NS25 Maximum Ratings

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
250
V
VDGR
 Drain- gate Voltage(RGS = 20 k)
250
V
VGS
 Gate-source Voltage
± 20
V
ID
 Drain Current (continuous) at Tc = 25 oC
6
A
ID
 Drain Current (continuous) at Tc = 100 oC
4
A
IDM(•)
 Drain Current (pulsed)
24
A
Ptot
 Total Dissipation at Tc = 25 oC
70
W
 Derating Factor
0.56
W/oC
dv/dt (1) Peak Diode Recovery voltage slope
5
V/ns
Tstg
 Storage Temperature
-65 to 175
oC
Tj
 Max. Operating Junction Temperature
150
oC

STP6NS25 Typical Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITH MODE POWER SUPPLIES (SMPS)
 DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

STP6NS25 datasheet

STP6NS25
PDF/DataSheet Download

  • Datasheet: STP6NS25
  • File Size: 273298 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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Related Part Number

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