ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITH MODE POWER SUPPLIES (SMPS)DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain- gate Voltage(RGS = 20 k) 2...
STP6NS25: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITH MODE POWER SUPPLIES (SMPS)DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENTSpecifications Symbol Parameter Value Unit ...
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Features: `TYPICAL RDS(on) = 0.012 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE A...
| Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
250 |
V |
|
VDGR |
Drain- gate Voltage(RGS = 20 k) |
250 |
V |
|
VGS |
Gate-source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 oC |
6 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 oC |
4 |
A |
|
IDM(•) |
Drain Current (pulsed) |
24 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
70 |
W |
| Derating Factor |
0.56 |
W/oC | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
5 |
V/ns |
|
Tstg |
Storage Temperature |
-65 to 175 |
oC |
|
Tj |
Max. Operating Junction Temperature |
150 |
oC |
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes STP6NS25 suitable in coverters for lighting applications.