STP70NF03L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.0075 Ohms
Gate-Source Breakdown Voltage : +/- 18 V


Application

  SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 k)	30	V
VGS	Gate- source Voltage	± 18	V
ID(#)	Drain Current (continuous) at TC = 25°C	70	A
ID	Drain Current (continuous) at TC = 100°C	50	A
DM(`)	Drain Current (pulsed)	280	A
Ptot	Total Dissipation at TC = 25°C	100	W
	Derating Factor	0.67	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	5.5	V/ns
EAS (2)	Single Pulse Avalanche Energy	500	mJ
Tstg	Storage Temperature	-55 to 175	°C
Tj	Operating Junction Temperature

Description

This application specific Power MOSFET STP70NF03L is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

Parameters:

Technical/Catalog Information	STP70NF03L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	1440pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP70NF03L STP70NF03L