MFG:ST Package Cooled:TO-220 D/C:00+
MFG: ST
Package Cooled: TO-220
D/C: 00+
Description: This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Fea...
This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS |
Gate- source Voltage |
± 18 |
V |
| ID(#) |
Drain Current (continuous) at TC = 25°C |
70 |
A |
| ID |
Drain Current (continuous) at TC = 100°C |
50 |
A |
| DM(`) |
Drain Current (pulsed) |
280 |
A |
| Ptot |
Total Dissipation at TC = 25°C |
100 |
W |
|
Derating Factor |
0.67 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
5.5 |
V/ns |
| EAS (2) |
Single Pulse Avalanche Energy |
500 |
mJ |
| Tstg |
Storage Temperature |
-55 to 175 |
°C |
| Tj |
Operating Junction Temperature |
SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS
STP70NF03L
PDF/DataSheet Download
MOSFET N-CH 100V 65A TO-220
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